Infineon BC858BWE6327

Infineon · Transistors (BJTs) · MPN BC858BWE6327

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain220
Pd - Power Dissipation250mW
typePNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))650mV
Operating Temperature-

Technical details

30V 220 PNP 100mA SOT-323-3 Single Bipolar Transistors RoHS

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