Infineon BC857BE6327HTSA1

Infineon · Transistors (BJTs) · MPN BC857BE6327HTSA1

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain220
Pd - Power Dissipation330mW
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))650mV
Operating Temperature-

Technical details

Bipolar (BJT) Transistor PNP 45V 100mA 250MHz 330mW Surface Mount SOT-23

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