Infineon BC856S E6433

Infineon · Transistors (BJTs) · MPN BC856S E6433

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Specifications

Current - Collector Cutoff15nA
DC Current Gain200
Collector - Emitter Voltage VCEO65V
Pd - Power Dissipation250mW
Transition frequency(fT)250MHz
Vce Saturation(VCE(sat))650mV
typePNP
Current - Collector(Ic)100mA
Operating Temperature-

Technical details

200 65V 250mW PNP 100mA SOT-363 Bipolar Transistor Arrays RoHS

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