Infineon BC846SE6327

Infineon · Transistors (BJTs) · MPN BC846SE6327

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO65V
Emitter-Base Voltage VEBO6V
DC Current Gain200
Pd - Power Dissipation250mW
Number2 NPN
typeNPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))600mV

Technical details

65V 200 2 NPN NPN 100mA SOT-363-6 Single Bipolar Transistors RoHS

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