Infineon BC 857S H6827

Infineon · Transistors (BJTs) · MPN BC 857S H6827

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Specifications

Current - Collector Cutoff15nA
DC Current Gain290
Pd - Power Dissipation250mW
Collector - Emitter Voltage VCEO45V
Transition frequency(fT)250MHz
Vce Saturation(VCE(sat))250mV
typePNP
Current - Collector(Ic)100mA
Operating Temperature-

Technical details

290 250mW 45V PNP 100mA SOT-363 Bipolar Transistor Arrays RoHS

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