Infineon AUIRFB8409

Infineon · FETs & Power MOSFETs · MPN AUIRFB8409

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Specifications

Gate Charge(Qg)300nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)2.13nF
Current - Continuous Drain(Id)409A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)1.46nF
RDS(on)0.97mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)14.24nF
TypeN-Channel

Technical details

40V 409A 2.2V 375W 0.97mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS

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