Infineon AUIRF7379QTR

Infineon · FETs & Power MOSFETs · MPN AUIRF7379QTR

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Specifications

Configuration-
Gate Charge(Qg)25nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)5.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V;1V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)72pF;93pF
RDS(on)-
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)520pF;440pF

Technical details

30V 5.8A 2.5W 1 N-Channel + 1 P-Channel SO-8 Single FETs, MOSFETs RoHS

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