Infineon · FETs & Power MOSFETs · MPN AIMZHN120R040M1TXKSA1
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| Gate Charge(Qg) | 43nC |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 63pF |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.1V |
| Pd - Power Dissipation | 268W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.6pF |
| RDS(on) | 50mΩ@20V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.264nF |
| Type | N-Channel |
1.2kV 55A 268W Through Hole TO-247-4