Infineon AIMZH120R020M1TXKSA1

Infineon · FETs & Power MOSFETs · MPN AIMZH120R020M1TXKSA1

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Specifications

Gate Charge(Qg)82nC
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)126pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.1V
Pd - Power Dissipation429W
RDS(on)25mΩ
Reverse Transfer Capacitance (Crss@Vds)7pF
Number1 N-channel
Input Capacitance(Ciss)2.667nF
TypeN-Channel

Technical details

1.2kV 100A 429W Through Hole TO-247-4

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