Infineon · FETs & Power MOSFETs · MPN AIMZH120R010M1TXKSA1
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| Gate Charge(Qg) | 178nC |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 268pF |
| Current - Continuous Drain(Id) | 202A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.1V |
| Pd - Power Dissipation | 750W |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| RDS(on) | 11.3mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.703nF |
| Type | N-Channel |
1.2kV 202A 5.1V 750W 11.3mΩ 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS