Infineon AIMZA75R016M1HXKSA1

Infineon · FETs & Power MOSFETs · MPN AIMZA75R016M1HXKSA1

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Specifications

Drain to Source Voltage750V
Gate Charge(Qg)81nC@18V
Current - Continuous Drain(Id)89A
Output Capacitance(Coss)181pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.3V
Pd - Power Dissipation319W
RDS(on)20mΩ@18V
Reverse Transfer Capacitance (Crss@Vds)17pF
Number1 N-channel
Input Capacitance(Ciss)2.869nF

Technical details

750V 89A 4.3V 319W 20mΩ@18V 1 N-channel TO-247-4 Single FETs, MOSFETs RoHS

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