Infineon · FETs & Power MOSFETs · MPN AIMW120R080M1XKSA1
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| Gate Charge(Qg) | 28nC |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 58pF |
| Current - Continuous Drain(Id) | 33A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.7V |
| Pd - Power Dissipation | 150W |
| RDS(on) | 104mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 6.5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.06nF |
| Type | N-Channel |
N-Channel 1.2kV 33A 150W Through Hole TO-247-3-41