Infineon AIMCQ120R080M1TXTMA1

Infineon · FETs & Power MOSFETs · MPN AIMCQ120R080M1TXTMA1

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Specifications

Drain to Source Voltage1.2kV
Gate Charge(Qg)24nC
Current - Continuous Drain(Id)34A
Output Capacitance(Coss)35pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.1V
Pd - Power Dissipation211W
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)100mΩ
Number1 N-channel
Input Capacitance(Ciss)671pF
TypeN-Channel

Technical details

1.2kV 34A 5.1V 211W 100mΩ 1 N-channel N-Channel PG-HDSOP-22 Single FETs, MOSFETs RoHS

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