Infineon · FETs & Power MOSFETs · MPN AIMBG75R040M1HXTMA1
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| Gate Charge(Qg) | 34nC |
|---|---|
| Drain to Source Voltage | 750V |
| Current - Continuous Drain(Id) | 47A |
| Output Capacitance(Coss) | 99pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 211W |
| RDS(on) | 52mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 7.2pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.135nF |
| Type | N-Channel |
750V 47A 5.6V 211W 52mΩ 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS