Infineon · FETs & Power MOSFETs · MPN AIMBG75R016M1HXTMA1
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 81nC |
| Drain to Source Voltage | 750V |
| Output Capacitance(Coss) | 236pF |
| Current - Continuous Drain(Id) | 98A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.6V |
| Pd - Power Dissipation | 384W |
| RDS(on) | 22mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.869nF |
750V 98A 5.6V 384W 22mΩ 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS