Infineon · FETs & Power MOSFETs · MPN AIMBG120R080M1XTMA1
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| Gate Charge(Qg) | 24nC |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 35pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.1V |
| Pd - Power Dissipation | 168W |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| RDS(on) | 100mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 671pF |
| Type | N-Channel |
1.2kV 30A 5.1V 168W 100mΩ 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS