Infineon · FETs & Power MOSFETs · MPN 2N7002H6327
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 600pC |
| Current - Continuous Drain(Id) | 300mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| RDS(on) | 3Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 20pF |
N-Channel 60V 0.3A 0.5W Surface Mount SOT-23