Infineon 2N7002DWH6327

Infineon · FETs & Power MOSFETs · MPN 2N7002DWH6327

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Specifications

Current - Continuous Drain(Id)300mA
RDS(on)4Ω@4.5V
Pd - Power Dissipation500mW
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)3pF
Number2 N-Channel
Input Capacitance(Ciss)20pF
Gate Charge(Qg)-
Operating Temperature-
Output Capacitance(Coss)-

Technical details

N-Channel Array 60V 0.3A 0.5W Surface Mount SOT-363

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