Infineon · FETs & Power MOSFETs · MPN 2N6806
No reviews yet — be the first to review Infineon 2N6806.
| Gate Charge(Qg) | 31nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 6.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 920mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 700pF |
| Type | P-Channel |
200V 6.5A 4V 75W 920mΩ@10V 1 P-Channel P-Channel TO-204AA(TO-3) Single FETs, MOSFETs