Infineon · FETs & Power MOSFETs · MPN 1IRF3710PBF
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| Gate Charge(Qg) | 130nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 57A |
| Output Capacitance(Coss) | 410pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 72pF |
| RDS(on) | 23mΩ@10V |
| Input Capacitance(Ciss) | 3.13nF |
| Type | N-Channel |
100V 57A 4V 200W 23mΩ@10V N-Channel TO-220 Single FETs, MOSFETs RoHS