HXY MOSFET ZXMN2F30FH-HXY

HXY MOSFET · FETs & Power MOSFETs · MPN ZXMN2F30FH-HXY

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Specifications

ConfigurationStandalone
Gate Charge(Qg)2.9nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)48pF
Current - Continuous Drain(Id)2.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))750mV
Pd - Power Dissipation900mW
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)35mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)260pF

Technical details

N-Channel 20V 2.8A 0.9W Surface Mount SOT-23

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