HXY MOSFET · FETs & Power MOSFETs · MPN ZXMN2A04DN8-HXY
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| Output Capacitance(Coss) | 90pF |
|---|---|
| Pd - Power Dissipation | 2W |
| Configuration | Standalone |
| Gate Charge(Qg) | 11nC@4.5V |
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF |
| RDS(on) | 21mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 570pF |
N-Channel Array 20V 6A 2W Surface Mount SOP-8