HXY MOSFET · FETs & Power MOSFETs · MPN XP236N2001TR-G-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 2.7nC@4.5V |
| Current - Continuous Drain(Id) | 2A |
| Output Capacitance(Coss) | 38pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 850mW |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| RDS(on) | 86mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 184pF |
N-Channel 30V 2A 0.85W Surface Mount SOT-23