HXY MOSFET · FETs & Power MOSFETs · MPN XP202A0003PR-G-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 9.5nC@4.5V |
| Current - Continuous Drain(Id) | 5A |
| Output Capacitance(Coss) | 115pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.2W |
| RDS(on) | 40mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 950pF |
30V 5A 1V 1.2W 40mΩ@10V 1 P-Channel P-Channel SOT-89 Single FETs, MOSFETs RoHS