HXY MOSFET · FETs & Power MOSFETs · MPN WPM1481-6-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 15V |
| Gate Charge(Qg) | 35nC@4.5V |
| Current - Continuous Drain(Id) | 16A |
| Output Capacitance(Coss) | 670pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2.8W |
| RDS(on) | 11mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 560pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.6nF |
15V 16A 1V 2.8W 11mΩ@4.5V 1 P-Channel P-Channel DFN2X2B-6L Single FETs, MOSFETs RoHS