HXY MOSFET · FETs & Power MOSFETs · MPN WNM2030-3-HXY
No reviews yet — be the first to review HXY MOSFET WNM2030-3-HXY.
| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 13pF |
| Current - Continuous Drain(Id) | 1.2A |
| Gate Threshold Voltage (Vgs(th)) | 650mV |
| Pd - Power Dissipation | 150mW |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 150mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 79pF |
| Type | N-Channel |
20V 1.2A 650mV 150mW 150mΩ@4.5V 1 N-channel N-Channel SOT-723 Single FETs, MOSFETs RoHS