HXY MOSFET · FETs & Power MOSFETs · MPN UF3SC120016K4S-HXY
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 211nC |
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 115A |
| Output Capacitance(Coss) | 230pF |
| Operating Temperature - | -40℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 556W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 22.3mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.085nF |
1.2kV 115A 3.6V 556W 22.3mΩ 1 N-channel N-Channel TO-247H-4L Single FETs, MOSFETs RoHS