HXY MOSFET · FETs & Power MOSFETs · MPN UF3SC065040D8S-HXY
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Gate Charge(Qg) | 66.2nC |
| Output Capacitance(Coss) | 119pF |
| Current - Continuous Drain(Id) | 68A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 326W |
| RDS(on) | 58mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.41nF |
1.2kV 68A 2.7V 326W 58mΩ 1 N-channel N-Channel DFN-5B(8x8) Single FETs, MOSFETs RoHS