HXY MOSFET · FETs & Power MOSFETs · MPN UF3C120040K3S-HXY
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 114nC |
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 129pF |
| Current - Continuous Drain(Id) | 63A |
| Operating Temperature - | -40℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 283W |
| RDS(on) | 43mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.357nF |
1.2kV 63A 3.6V 283W 43mΩ 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS