HXY MOSFET · FETs & Power MOSFETs · MPN UF3C065040K3S-HXY
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 103nC |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 246pF |
| Current - Continuous Drain(Id) | 85A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.3V |
| Pd - Power Dissipation | 312W |
| RDS(on) | 51mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.682nF |
650V 85A 4.3V 312W 51mΩ 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS