HXY MOSFET · FETs & Power MOSFETs · MPN SUD35N10-26P-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 40nC@10V |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 180pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 73W |
| Reverse Transfer Capacitance (Crss@Vds) | 148pF |
| RDS(on) | 18mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.727nF |
N-Channel 100V 50A 73W Surface Mount TO-252-2L