HXY MOSFET · FETs & Power MOSFETs · MPN SUD19P06-60-GE3-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 68nC@10V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 134pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 79W |
| Reverse Transfer Capacitance (Crss@Vds) | 98pF |
| RDS(on) | 29mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.026nF |
P-Channel 60V 30A 79W Surface Mount TO-252-2L