HXY MOSFET · FETs & Power MOSFETs · MPN STW56N65M2-4-HXY
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 47nC |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 55A |
| Output Capacitance(Coss) | 119pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 208W |
| RDS(on) | 58mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.41nF |
650V 55A 2.7V 208W 58mΩ 1 N-channel N-Channel TO-247H-4L Single FETs, MOSFETs RoHS