HXY MOSFET · FETs & Power MOSFETs · MPN STP5NK65ZFP-HXY
No reviews yet — be the first to review HXY MOSFET STP5NK65ZFP-HXY.
| Configuration | - |
|---|---|
| Gate Charge(Qg) | 4.5nC |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 11.5pF |
| Current - Continuous Drain(Id) | 3.9A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 25.86W |
| RDS(on) | 690mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 1.9pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 37.5pF |
650V 3.9A 2.8V 25.86W 690mΩ 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS