HXY MOSFET · FETs & Power MOSFETs · MPN STN4102-HXY
No reviews yet — be the first to review HXY MOSFET STN4102-HXY.
| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 4.9nC@4.5V |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 62pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 20.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 51pF |
| RDS(on) | 18mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 416pF |
N-Channel 30V 20A 20.8W Surface Mount TO-252-2L