HXY MOSFET · FETs & Power MOSFETs · MPN STL13N65M2-HXY
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 650V |
| Gate Charge(Qg) | 11.6nC |
| Output Capacitance(Coss) | 22pF |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 71W |
| RDS(on) | 390mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 3.2pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 184pF |
650V 13A 2.7V 71W 390mΩ 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS