HXY MOSFET · FETs & Power MOSFETs · MPN STF12N65M2-HXY
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 9.7nC |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 19pF |
| Current - Continuous Drain(Id) | 7.1A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 30W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 147pF |
650V 7.1A 2.8V 30W 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS