HXY MOSFET · FETs & Power MOSFETs · MPN STE145N65M5-HXY
No reviews yet — be the first to review HXY MOSFET STE145N65M5-HXY.
| Configuration | - |
|---|---|
| Gate Charge(Qg) | 268nC |
| Drain to Source Voltage | 750V |
| Current - Continuous Drain(Id) | 165A |
| Output Capacitance(Coss) | 482pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 417W |
| RDS(on) | 15mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.22nF |
750V 165A 2.7V 417W 15mΩ 1 N-channel N-Channel SOT-227 Single FETs, MOSFETs RoHS