HXY MOSFET STD80N10F7-HXY

HXY MOSFET · FETs & Power MOSFETs · MPN STD80N10F7-HXY

No reviews yet — be the first to review HXY MOSFET STD80N10F7-HXY.

Specifications

ConfigurationStandalone
Gate Charge(Qg)31.3nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)451pF
Current - Continuous Drain(Id)70A
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)12.9pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.368nF
TypeN-Channel

Technical details

100V 70A 100W Surface Mount TO-252-2L

Related FETs & Power MOSFETs