HXY MOSFET · FETs & Power MOSFETs · MPN STD2LN60K3-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 650V |
| Gate Charge(Qg) | 9.5nC@10V |
| Current - Continuous Drain(Id) | 2A |
| Output Capacitance(Coss) | 33pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 35W |
| RDS(on) | 4.2Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 335pF |
650V 2A 4V 35W 4.2Ω@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS