HXY MOSFET · FETs & Power MOSFETs · MPN STD10NM65N-HXY
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 8.5nC |
| Drain to Source Voltage | 750V |
| Current - Continuous Drain(Id) | 6.8A |
| Output Capacitance(Coss) | 17pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 41W |
| RDS(on) | 610mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 176pF |
750V 6.8A 4V 41W 610mΩ 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS