HXY MOSFET · FETs & Power MOSFETs · MPN SSM3J332R-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 8.5nC@4.5V |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 105pF |
| Current - Continuous Drain(Id) | 4.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 46mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 880pF |
30V 4.2A 1V 1.2W 46mΩ@10V 1 P-Channel P-Channel SOT-23-3L Single FETs, MOSFETs RoHS