HXY MOSFET · FETs & Power MOSFETs · MPN SQD90P04-9M4L_GE3-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 40V |
| Gate Charge(Qg) | 110nC@10V |
| Output Capacitance(Coss) | 430pF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 81W |
| Reverse Transfer Capacitance (Crss@Vds) | 385pF |
| RDS(on) | 6.4mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.295nF |
40V 80A 81W Surface Mount TO-252-2L