HXY MOSFET · FETs & Power MOSFETs · MPN SQD40081EL_GE3-HXY
No reviews yet — be the first to review HXY MOSFET SQD40081EL_GE3-HXY.
| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 110nC@10V |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 80A |
| Output Capacitance(Coss) | 430pF |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 81W |
| RDS(on) | 6.4mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 385pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.295nF |
| Type | P-Channel |
40V 80A 1.6V 81W 6.4mΩ@10V 1 P-Channel P-Channel TO-252-2L Single FETs, MOSFETs RoHS