HXY MOSFET · FETs & Power MOSFETs · MPN SQ7414AEN-T1_GE3-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 26nC@10V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 64pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 33W |
| Reverse Transfer Capacitance (Crss@Vds) | 54pF |
| RDS(on) | 24mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.06nF |
N-Channel 60V 30A 33W Surface Mount DFN3x3-8L