HXY MOSFET · FETs & Power MOSFETs · MPN SQ4946AEY-T1_GE3-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 50nC@10V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 155pF |
| Current - Continuous Drain(Id) | 6.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 2.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 116pF |
| RDS(on) | 32mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.92nF |
N-Channel Array 60V 6.5A 2.1W Surface Mount SOP-8