HXY MOSFET · FETs & Power MOSFETs · MPN SQ4182EY-T1_GE3-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 24nC@10V |
| Output Capacitance(Coss) | 370pF |
| Current - Continuous Drain(Id) | 30A |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 1.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 286pF |
| RDS(on) | 3.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.1nF |
| Type | N-Channel |
30V 30A 1.5V 1.4W 3.3mΩ@10V 1 N-channel N-Channel SOP-8 Single FETs, MOSFETs RoHS