HXY MOSFET · FETs & Power MOSFETs · MPN SQ2319ADS-T1_BE3-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 14nC@10V |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 5A |
| Output Capacitance(Coss) | 90pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 1.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF |
| RDS(on) | 73mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 600pF |
40V 5A 1.9V 1.4W 73mΩ@10V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS