HXY MOSFET · FETs & Power MOSFETs · MPN SPD06N60C3BTMA1-HXY
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 6.5nC |
| Drain to Source Voltage | 800V |
| Output Capacitance(Coss) | 17pF |
| Current - Continuous Drain(Id) | 8.6A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 42.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.7pF |
| RDS(on) | 900mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 103pF |
800V 8.6A 2.3V 42.8W 900mΩ 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS