HXY MOSFET · FETs & Power MOSFETs · MPN SMIRF8N65T2TL-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 32nC@10V |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 128pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 40W |
| RDS(on) | 860mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.642nF |
650V 10A 4V 40W 860mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS